Title :
GaInAsP/InP surface emitting lasers grown by chemical beam epitaxy
Author :
Uchida, Tomoyuki ; Yokouchi, N. ; Miyamoto, Takahiro ; Inaba, Y. ; Koyama, Fumio ; Iga, Kenichi
fDate :
3/12/1992 12:00:00 AM
Abstract :
A GaInAsP/InP surface emitting laser has been demonstrated grown by chemical beam epitaxy (CBE) for the first time. The device has a 30 mu m round-low mesa with a 1.0 mu m active layer. The threshold current as low as 2.7 mA (455 A/cm2) was obtained under 77 K CW operation (=1.43 mu m). This is the lowest value of long wavelength SE lasers ever reported. These results show the possibility of realising high performance SE lasers grown by CBE.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; 1.43 micron; 2.7 mA; 77 K; CW operation; GaInAsP-InP; active layer; chemical beam epitaxy; round-low mesa; surface emitting lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920347
