• DocumentCode
    885542
  • Title

    Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GaInAsP/GaInAsP quantum-well lasers

  • Author

    Barrau, J. ; Brousseau, B. ; Calvas, B. ; Emery, J.Y. ; Simes, R.J. ; Starck, C. ; Goldstein, L.

  • Author_Institution
    CNRS, INSA, Toulouse, France
  • Volume
    28
  • Issue
    6
  • fYear
    1992
  • fDate
    3/12/1992 12:00:00 AM
  • Firstpage
    551
  • Lastpage
    553
  • Abstract
    The first theoretical evaluation is reported of the effect of biaxial compression on the quantum-well GaxIn1-xAs/Ga0.20InAs0.45P and Ga0.20In0.80AsyP1-y/Ga0.20In0.80As0 .45P0.55 laser threshold current density. Reference is made to known experimental results, and a comparison carried out of the potentialities of the two types of laser.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser theory; semiconductor junction lasers; Ga 0.2In 0.8As yP 1-y-Ga 0.2In 0.8As 0.45P 0.55; Ga xIn 1-xAs-Ga 0.2InAs 0.45P; biaxial compression; compressively strained; quantum-well lasers; semiconductor lasers; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920348
  • Filename
    126494
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=885542