Title :
Elimination of intervalence band absorption in compressively strained InGaAs/InP 1.5 mu m MQW lasers observed by hydrostatic pressure measurements
Author :
Ring, W.S. ; Adams, A.R. ; Thijs, P.J.A.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
fDate :
3/12/1992 12:00:00 AM
Abstract :
Hydrostatic pressure was applied to 1.5 mu m buried heterostructure In0.8Ga0.2As/InP (1.8% strain) lasers. In contrast to bulk and unstrained MQW devices, no increase in quantum differential efficiency was observed indicating negligible intervalence band absorption. The pressure and temperature variation of the threshold current was explained assuming Auger recombination and a reduced hole mass.
Keywords :
Auger effect; III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; 1.5 micron; Auger recombination; In 0.8Ga 0.2As-InP; MQW lasers; absorption elimination; buried heterostructure; compressively strained; hole mass-reduction; hydrostatic pressure measurements; intervalence band absorption; pressure variation; quantum differential efficiency; semiconductor lasers; temperature variation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920359
