Title :
Kink-related noise overshoot in SOI n-MOSFETs operating at 4.2 K
Author :
Simoen, Eddy ; Dierickx, B. ; Claeys, Cor
Author_Institution :
IMEC, Leuven, Belgium
fDate :
3/12/1992 12:00:00 AM
Abstract :
The low frequency noise behaviour of SOI n-MOSFETs operated at 4.2 K is reported for the first time and compared with room temperature behaviour. It is shown that the noise level increases by a factor of 3-5, and the kink-related noise overshoot become much more pronounced on cooling. These results are compared with the noise overshoot observed in bulk devices operating at 4.2 K and a similar explanation for the phenomenon is proposed.
Keywords :
cryogenics; electron device noise; insulated gate field effect transistors; semiconductor-insulator boundaries; 4.2 K; LF noise; NMOSFET; SOI n-MOSFETs; kink-related noise overshoot; low frequency noise behaviour; n-channel device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920364
