Title :
Modelling and measurement of surface impurity profiles of laterally diffused regions
Author :
Lee, Hee-Gook ; Dutton, Robert W. ; Sansbury, James D. ; Moll, John L.
fDate :
8/1/1978 12:00:00 AM
Abstract :
Analytic solutions for two-dimensional diffused profiles are obtained for a drive-in in an inert ambient and in an oxidizing ambient. For both cases, the impurity profiles have the same lateral dependence. An experiment which extracts the surface impurity profile near a diffusion mask edge is described. Test structures for this purpose have been fabricated using a CMOS process.
Keywords :
Diffusion in solids; Doping profiles; Impurity distribution; Integrated circuit technology; Ion implantation; Semiconductor doping; diffusion in solids; doping profiles; impurity distribution; integrated circuit technology; ion implantation; semiconductor doping; CMOS process; Electric variables; Equations; Helium; Laboratories; Measurement techniques; Semiconductor device modeling; Semiconductor impurities; Silicon; Testing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051076
