Title :
I/sup 2/L with polysilicon diode contact
Author :
Mikoshiba, Hiroaki
Abstract :
A polysilicon diode is used instead of a Schottky diode in I/SUP 2/L/MTL to reduce the signal swing. The new method enables improvement of the power-delay product of a conventional I/SUP 2/L, which has heavily doped collectors, without detriment to process simplicity, while retaining high-packing density and compatibility with other bipolar circuits. Experiments demonstrate a factor of 2.5 to 3 improvement in propagation delay at a low-current level. However, high-current operation is restricted by decreased noise margin with increasing current level.
Keywords :
Bipolar integrated circuits; Integrated logic circuits; Semiconductor diodes; bipolar integrated circuits; integrated logic circuits; semiconductor diodes; Boron alloys; Circuits; Grain boundaries; Logic; Noise level; Propagation delay; Schottky barriers; Schottky diodes; Silicon; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051081
