Title :
Inversion charge transistor (ICT) for better threshold control in small dimensions
Author :
Troutman, R.R. ; Lee, H.S.
fDate :
8/1/1978 12:00:00 AM
Abstract :
Data are presented to show that threshold voltage is less dependent on channel length for an inversion charge transistor than for a regular IGFET. Thus, for an acceptable threshold tolerance, an inversion charge transistor can be operated with a smaller channel length than an IGFET.
Keywords :
Field effect transistors; field effect transistors; Doping profiles; Etching; FETs; Fabrication; Large scale integration; Length measurement; Lithography; Printing; Threshold voltage; Voltage control;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051082
