Title :
Embedded TFT nand-Type Nonvolatile Memory in Panel
Author :
Chen, Hung-Tse ; Hsieh, Szu-I ; Lin, Chrong-Jung ; King, Ya-Chin
Author_Institution :
Display Technol. Center, Ind. Technol. Res. Inst., Hsinchu
fDate :
6/1/2007 12:00:00 AM
Abstract :
A new NAND-type nonvolatile memory with a field-enhancing tip structure embedded in low-temperature polycrystalline silicon (LTPS) panel was demonstrated on a glass substrate for the first time. A thin-film transistor (TFT) metal-oxide-nitride-oxide-silicon (MONOS) device based on sequential lateral solidification crystallization with a fully depleted poly-Si channel, an oxide-nitride-oxide stack gate dielectric, and a metal gate is integrated into a NAND array. A NAND test array based on p-channel LTPS TFTs exhibits good cycling endurance and data retention properties and negligible program and read disturbance. These results strongly support the claim that this TFT-MONOS device is a promising candidate for use in embedded nonvolatile memory for system-on-panel and 3-D IC applications
Keywords :
MIS devices; NAND circuits; embedded systems; integrated memory circuits; thin film transistors; 3D integrated circuit applications; MONOS device; NAND array; cycling endurance; data retention properties; embedded TFT NAND-type nonvolatile memory; field-enhancing tip structure; fully depleted poly-Si channel; glass substrate; low-temperature polycrystalline silicon panel; metal gate; oxide-nitride-oxide stack gate dielectric; p-channel LTPS TFT; program disturbance; read disturbance; sequential lateral solidification crystallization; system-on-panel; thin-film transistor metal-oxide-nitride-oxide-silicon device; Crystallization; Dielectric devices; Dielectric substrates; Glass; MONOS devices; Nonvolatile memory; Silicon; Testing; Thin film transistors; Three-dimensional integrated circuits; Low-temperature polycrystalline silicon (LTPS); metal–oxide–nitride–oxide–silicon (MONOS); nonvolatile memory; sequential lateral solidified (SLS); thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.896894
