Sub-1-V Supply Self-Adaptive CMOS Image Sensor Cell With 86-dB Dynamic Range

Author

Lee, Sungsik ; Yang, Kyounghoon

Author_Institution

Korea Adv. Inst. of Sci. & Technol., Daejeon

Volume

28

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

492

Lastpage

494

Abstract

This letter presents a high dynamic range CMOS active pixel structure operating at a sub-1-V supply voltage, which is implemented using a standard 0.18-mum CMOS logic process. In order to improve the output voltage swing range and associated pixel dynamic range at a low supply voltage, a pMOS reset structure is incorporated into the pixel structure along with a photogate pixel structure based on the self-adaptive photosensing operation. At a low supply voltage of 0.9 V, the new pixel provides an output voltage swing range of 0.41 V and a high dynamic range of 86 dB, which is the highest among the reported pixel structures up to date operating at sub-1-V

Keywords

CMOS image sensors; low-power electronics; 0.18 micron; 0.9 V; CMOS active pixel structure; CMOS logic process; high dynamic range; pMOS reset structure; photogate pixel structure; self-adaptive CMOS image sensor cell; self-adaptive photosensing operation; CMOS image sensors; CMOS logic circuits; CMOS process; Design optimization; Dynamic range; Helium; Low voltage; MOSFET circuits; Noise level; Personal digital assistants; Adaptive sensitivity; CMOS active pixel sensor (CAPS); high dynamic range; low supply voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.896885

Filename

4212176