• DocumentCode
    885919
  • Title

    Molybdenum gate MOS applied to an AM/FM digital frequency synthesizer

  • Author

    Ohgishi, Tsutomu ; Doi, Atsumasa ; Akiyama, Toru ; Enomoto, Noboru

  • Volume
    13
  • Issue
    5
  • fYear
    1978
  • fDate
    10/1/1978 12:00:00 AM
  • Firstpage
    555
  • Lastpage
    560
  • Abstract
    An n-channel molybdenum self-aligned gate MOS technology has been developed and applied to an AM/FM digital frequency synthesizer. A high-frequency programmable divider operating at 180 MHz has been achieved by the use of molybdenum, low parasitic capacitance structures and zero-threshold MOS transistors, while maintaining conventional design rules. Molybdenum gate MOS has enabled the realization of a single-chip system, which consists of a directly programmable divider for the AM/FM local oscillators, a reference counter, a phase comparator, a circuit for dial tuning, and memories for storing the frequencies for 16 stations. A differential comparator has been fabricated on the LSI chip to simplify digital tuning in the receiver.
  • Keywords
    Digital integrated circuits; Field effect integrated circuits; Frequency synthesizers; Integrated circuit technology; Large scale integration; Molybdenum; digital integrated circuits; field effect integrated circuits; frequency synthesizers; integrated circuit technology; large scale integration; molybdenum; Circuit optimization; Conductivity; Counting circuits; Frequency conversion; Frequency synthesizers; Large scale integration; Local oscillators; MOSFETs; Parasitic capacitance; Silicon;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1978.1051099
  • Filename
    1051099