DocumentCode
885919
Title
Molybdenum gate MOS applied to an AM/FM digital frequency synthesizer
Author
Ohgishi, Tsutomu ; Doi, Atsumasa ; Akiyama, Toru ; Enomoto, Noboru
Volume
13
Issue
5
fYear
1978
fDate
10/1/1978 12:00:00 AM
Firstpage
555
Lastpage
560
Abstract
An n-channel molybdenum self-aligned gate MOS technology has been developed and applied to an AM/FM digital frequency synthesizer. A high-frequency programmable divider operating at 180 MHz has been achieved by the use of molybdenum, low parasitic capacitance structures and zero-threshold MOS transistors, while maintaining conventional design rules. Molybdenum gate MOS has enabled the realization of a single-chip system, which consists of a directly programmable divider for the AM/FM local oscillators, a reference counter, a phase comparator, a circuit for dial tuning, and memories for storing the frequencies for 16 stations. A differential comparator has been fabricated on the LSI chip to simplify digital tuning in the receiver.
Keywords
Digital integrated circuits; Field effect integrated circuits; Frequency synthesizers; Integrated circuit technology; Large scale integration; Molybdenum; digital integrated circuits; field effect integrated circuits; frequency synthesizers; integrated circuit technology; large scale integration; molybdenum; Circuit optimization; Conductivity; Counting circuits; Frequency conversion; Frequency synthesizers; Large scale integration; Local oscillators; MOSFETs; Parasitic capacitance; Silicon;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1978.1051099
Filename
1051099
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