35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz

Author

Mei, X.B. ; Yoshida, W. ; Deal, W.R. ; Liu, P.H. ; Lee, J. ; Uyeda, J. ; Dang, L. ; Wang, J. ; Liu, W. ; Li, D. ; Barsky, M. ; Kim, Y.M. ; Lange, M. ; Chin, T.P. ; Radisic, V. ; Gaier, T. ; Fung, A. ; Samoska, L. ; Lai, R.

Author_Institution

Northrop Grumman Corp., Redondo Beach

Volume

28

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

470

Lastpage

472

Abstract

rdquoWe report the first submillimeter-wave monolithic microwave integrated circuit (MMIC) amplifier with 4.4-dB measured gain at 308-GHz frequency, making it the highest frequency MMIC amplifier reported to date. In this letter, a 35-nm InP high-electron mobility transistor process has been successfully developed with a projected maximum available gain of greater than 7 dB at 300 GHz. The excellent dc and RF performance makes it suitable for applications at frequencies well into the millimeter-wave band and, for the first time, in the submillimeter- wave band as well.

Keywords

HEMT integrated circuits; MMIC amplifiers; indium compounds; submillimetre wave devices; HEMT SMMIC amplifier; frequency 308 GHz; high electron mobility transistors; indium phosphide; submillimeter-wave monolithic microwave integrated circuit; Frequency; HEMTs; Indium phosphide; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave measurements; Monolithic integrated circuits; Radiofrequency amplifiers; Submillimeter wave integrated circuits; High-electron mobility transistor (HEMT); high frequency; indium phosphide (InP); submillimeter-wave monolithic microwave integrated circuit (SMMIC) amplifier;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.896897

Filename

4212182