Title :
A high speed molybdenum gate MOS RAM
Author :
Kondo, Mamour ; Mano, Tsuneo ; Yanagawa, Fumihiko ; Kikuchi, Hiroyuki ; Amazawa, Takao ; Kiuchi, Kazuhide ; Ieda, Nobuaki ; Yoshimura, Hisanori
Abstract :
Describes a high speed 16K molybdenum gate (Mo-gate) dynamic MOS RAM using a single transistor cell. New circuit technologies, including a capacitive-coupled sense-refresh amplifier and a dummy sense circuit, enable the achievement of high speed performance in combination with reduced propagation delay in the molybdenum word line due to the low resistivity. The n-channel Mo-gate process was established by developing an evaporation apparatus and by an improved heat treatment to reduce surface charge density. Ultraviolet photolithography for 2 /spl mu/m patterns and HCl oxidation for 400 /spl Aring/ thick gate oxide are used. The 16K word/spl times/1 bit device is fabricated on a 3.2 mm/spl times/4.0 mm chip. Cell size is 16 /spl mu/m/spl times/16 /spl mu/m Access time is less than 65 ns at V/SUB DD/=7 V and V/SUB BB/=-2 V. Power dissipation is 210 mW at 170 ns read-modify-write (RMW) cycle.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Molybdenum; Random-access storage; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; molybdenum; random-access storage; Circuits; Clocks; Heat treatment; High power amplifiers; MOSFETs; Multiplexing; Oxidation; Power dissipation; Propagation delay; Surface treatment;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051108
