• DocumentCode
    886010
  • Title

    Activation of Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition

  • Author

    Hamada, Hiroyuki ; Honda, Shogo ; Shono, M. ; Hiroyama, R. ; Yodoshi, K. ; Yamaguchi, Toru

  • Author_Institution
    Semicond. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
  • Volume
    28
  • Issue
    6
  • fYear
    1992
  • fDate
    3/12/1992 12:00:00 AM
  • Firstpage
    585
  • Lastpage
    587
  • Abstract
    Activation of the Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition (MOCVD) has been successfully improved using post-heat treatment. The p-type carrier concentration and electrical activity on the (Al0.65Ga0.35)0.5In0.5P layers were 1.8*1018 cm-3 and 0.7, respectively. Activation of the Zn acceptors was found to be attributable to the hydrogen in the AlGaInP layer.
  • Keywords
    III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium compounds; indium compounds; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; zinc; AlGaInP:Zn,H; MOCVD; electrical activity; metal organic chemical vapour deposition; misoriented substrates; p-type carrier concentration; post-heat treatment; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920369
  • Filename
    126514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886010