Title :
Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs
Author :
Shiu, Jin-Yu ; Huang, Jui-Chien ; Desmaris, Vincent ; Chang, Chia-Ta ; Lu, Chung-Yu ; Kumakura, Kazuhide ; Makimoto, Toshiki ; Zirath, Herbert ; Rorsman, Niklas ; Chang, Edward Yi
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
fDate :
6/1/2007 12:00:00 AM
Abstract :
A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high- power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = -4 V and Vds = 50 V and a maximum power added efficiency of 51.5% at Vgs = -4 V and Vds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; ion implantation; AlGaN-GaN; frequency 3 GHz; gate leakage; high-power microwave high electron mobility transistors; oxygen ion implantation isolation planar process; planar HEMT; voltage -4 V; voltage 30 V; voltage 50 V; Aluminum gallium nitride; Gallium nitride; Gate leakage; HEMTs; Helium; Ion implantation; Laboratories; MODFETs; Materials science and technology; Oxygen; GaN; high electron mobility transistors (HEMTs); implantation; power density; pulsed $I$ –$V$; transient;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.896904
