• DocumentCode
    886023
  • Title

    A 15-ns 1024-bit fully static MOS RAM

  • Author

    Wada, Toshio ; Kudoh, Osamu ; Nagahashi, Yasuhiko ; Matsue, Shigeki

  • Volume
    13
  • Issue
    5
  • fYear
    1978
  • Firstpage
    635
  • Lastpage
    639
  • Abstract
    A fully static 1K bit, TTL compatible, 5-V only MOS RAM has been achieved by using improved process technology and optimized circuit design. Address access time is less than 15 ns and power dissipation is less than 320 mW at room temperature.
  • Keywords
    Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Random-access storage; Transistor-transistor logic; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; random-access storage; transistor-transistor logic; Circuit synthesis; Conductivity; Design optimization; Doping; MOSFETs; Parasitic capacitance; Random access memory; Read-write memory; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1978.1051111
  • Filename
    1051111
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886023