• DocumentCode
    886040
  • Title

    DSA 4K static RAM

  • Author

    Torimaru, Yasuo ; Miyano, Katsumi ; Takeuchi, Hiromitsu

  • Volume
    13
  • Issue
    5
  • fYear
    1978
  • Firstpage
    647
  • Lastpage
    650
  • Abstract
    A high-performance diffusion self-aligned (DSA) 4K static RAM, which operates on a single power supply of 5 V without any clock input, has been fabricated. The RAM, composed of DSA MOSTs, depletion MOSTs, and high-impedance polysilicon load resistors, was designed using nonclocked static circuit techniques. The memory cell size and the chip size are 45/spl times/40 /spl mu/m and 3.88/spl times/3.45 mm, respectively. A typical access and cycle time of 76 ns is realized at a power dissipation of 500 mW. The RAM can retain data in a standby mode with a reduced supply voltage of 1.5 V, thereby decreasing the power dissipation to 60 mW. The active power dissipation can be decreased in a RAM fabricated with a lower ion-implantation dose to the depletion load MOSTs; thus the RAM may also be useful for memory applications where low power dissipation is of primary importance.
  • Keywords
    Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Random-access storage; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; random-access storage; Circuits; Clocks; Ion implantation; Microcomputers; Power dissipation; Power supplies; Random access memory; Read-write memory; Resistors; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1978.1051113
  • Filename
    1051113