DocumentCode :
886040
Title :
DSA 4K static RAM
Author :
Torimaru, Yasuo ; Miyano, Katsumi ; Takeuchi, Hiromitsu
Volume :
13
Issue :
5
fYear :
1978
Firstpage :
647
Lastpage :
650
Abstract :
A high-performance diffusion self-aligned (DSA) 4K static RAM, which operates on a single power supply of 5 V without any clock input, has been fabricated. The RAM, composed of DSA MOSTs, depletion MOSTs, and high-impedance polysilicon load resistors, was designed using nonclocked static circuit techniques. The memory cell size and the chip size are 45/spl times/40 /spl mu/m and 3.88/spl times/3.45 mm, respectively. A typical access and cycle time of 76 ns is realized at a power dissipation of 500 mW. The RAM can retain data in a standby mode with a reduced supply voltage of 1.5 V, thereby decreasing the power dissipation to 60 mW. The active power dissipation can be decreased in a RAM fabricated with a lower ion-implantation dose to the depletion load MOSTs; thus the RAM may also be useful for memory applications where low power dissipation is of primary importance.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Random-access storage; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; random-access storage; Circuits; Clocks; Ion implantation; Microcomputers; Power dissipation; Power supplies; Random access memory; Read-write memory; Resistors; Threshold voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1978.1051113
Filename :
1051113
Link To Document :
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