Spin coating over topography

Author

Peurrung, Loni M. ; Graves, David B.

Author_Institution

Dept. of Chem. Eng., California Univ., Berkeley, CA, USA

Volume

6

Issue

1

fYear

1993

fDate

2/1/1993 12:00:00 AM

Firstpage

72

Lastpage

76

Abstract

A model for predicting film thickness profiles around topographical features during spin coating is presented. This model is applicable to features of arbitrary geometry in the two lateral dimensions. This generally permits study of the planarization of real device structures, including both isolated and neighboring features, with any orientation with respect to the wafer center. Predictions from this model agree qualitatively with measured thin-film profiles from interferograms taken during spinning. Phenomena such as pile-up and wakes result from interactions between surface tension and other driving forces in the flow

Keywords

glass; laminar flow; photoresists; device structures; driving forces; film thickness profiles prediction; interferograms; isolated features; measured thin-film profiles; model; neighboring features; pile-up; planarization; spin coating over topography; surface tension; topographical features; viscous flow; wakes; Coatings; Equations; Geometry; Planarization; Predictive models; Resists; Semiconductor device modeling; Spinning; Surface tension; Surface topography;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.210660

Filename

210660