Title :
A charge-oriented model for MOS transistor capacitances
Author :
Ward, Donald E. ; Dutton, Robert W.
Abstract :
A new model for computer simulation of capacitance effects in MOS transistors is presented. Transient currents are found directly from the charge distribution in the device rather than from capacitances. The effective capacitances which result are nonreciprocal. The model guarantees conservation of charge and includes bulk capacitances. Several circuit examples are considered.
Keywords :
Capacitance; Digital simulation; Insulated gate field effect transistors; Semiconductor device models; capacitance; digital simulation; insulated gate field effect transistors; semiconductor device models; Capacitance; Capacitors; Charge coupled devices; Computer simulation; Integrated circuit technology; Large scale integration; MOSFETs; Solid modeling; Solid state circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051123
