• DocumentCode
    886156
  • Title

    An 8 mm/sup 2/, 5 V 16K dynamic RAM using a new memory cell"

  • Author

    Meusburger, Günther ; Horninger, Karlheinrich ; Lindert, Gerold

  • Volume
    13
  • Issue
    5
  • fYear
    1978
  • Firstpage
    708
  • Lastpage
    711
  • Abstract
    A small 16K dynamic RAM utilizing a new memory cell configuration is described. The new cell has two selector transistors and makes a very short bit line possible. The memory on 8 mm/SUP 2/ is built in a scaled double polysilicon technology with 3.5 /spl mu/m line width. First samples achieved an access time of 160 ns.
  • Keywords
    Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Random-access storage; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; random-access storage; Capacitance; Capacitors; Circuits; DRAM chips; Flip-flops; Latches; Pulse amplifiers; Random access memory; Signal design; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1978.1051124
  • Filename
    1051124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886156