DocumentCode
886184
Title
Transistor noise model for photodetector amplifiers
Author
Witkowicz, T.
Volume
13
Issue
5
fYear
1978
fDate
10/1/1978 12:00:00 AM
Firstpage
722
Lastpage
723
Abstract
A simplified transistor noise model valid for field-effect and bipolar transistors is introduced. The model is used to derive expressions for the equivalent noise current in transimpedance amplifiers employed in fiber optic receivers. Experimental data are presented supporting the theoretical calculations. Criteria for optimal biasing of field-effect and bipolar transistors are also presented.
Keywords
Amplifiers; Bipolar transistors; Electron device noise; Field effect transistors; Photodetectors; Semiconductor device models; amplifiers; bipolar transistors; electron device noise; field effect transistors; photodetectors; semiconductor device models; Bipolar transistors; Circuit noise; Equivalent circuits; FETs; Frequency; Noise generators; Optical amplifiers; Optical fiber amplifiers; Optical noise; Photodetectors;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1978.1051127
Filename
1051127
Link To Document