Approximation of junction field-effect transistor characteristics by a hyperbolic function

To analyze nonlinear circuits using the junction field-effect transistor (JFET), a new empirical equation is proposed to relate drain current to drain-source and gate-source voltages. This equation is a simpler form than the Shockley equations, and requires only drain characteristics to evaluate the constant /spl alpha/ in this equation. Good agreement is obtained between the predicted and experimental results.