Title :
Approximation of junction field-effect transistor characteristics by a hyperbolic function
Abstract :
To analyze nonlinear circuits using the junction field-effect transistor (JFET), a new empirical equation is proposed to relate drain current to drain-source and gate-source voltages. This equation is a simpler form than the Shockley equations, and requires only drain characteristics to evaluate the constant /spl alpha/ in this equation. Good agreement is obtained between the predicted and experimental results.
Keywords :
Junction gate field effect transistors; Nonlinear network analysis; Semiconductor device models; junction gate field effect transistors; nonlinear network analysis; semiconductor device models; Circuit analysis; Circuit noise; Equations; Error analysis; FETs; Low-frequency noise; Low-noise amplifiers; PIN photodiodes; Shape; Signal to noise ratio;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051128
