Title :
Epitaxial AlGaAs/AlAs distributed Bragg reflectors for green (550 nm) lightwaves
Author :
Young, D.B. ; Babic, D.I. ; DenBaars, S.P. ; Coldren, L.A.
Author_Institution :
California Univ., Santa Barbara, CA, USA
Abstract :
Epitaxial AlGaAs/AlAs DBR mirror stacks have been investigated to determine the maximum reflectivity achievable for 550 nm wavelength. A maximum reflectivity of greater than 90% has been achieved despite the optical loss in the AlGaAs, and a 70% peak reflectivity can be achieved with as few as five mirror periods.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; mirrors; molecular beam epitaxial growth; optical losses; reflectivity; semiconductor growth; semiconductor junction lasers; 550 nm; AlGaAs-AlAs; DBR mirror stacks; MBE; distributed Bragg reflectors; epitaxial growth; green lightwaves; maximum reflectivity; optical loss; peak reflectivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921199
