DocumentCode
8863
Title
Monolithically integrated terahertz quantum cascade array laser
Author
Jian-Yan Chen ; Junqi Liu ; Tao Wang ; Fengqi Liu ; Zhanguo Wang
Author_Institution
Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Volume
49
Issue
25
fYear
2013
fDate
December 5 2013
Firstpage
1632
Lastpage
1633
Abstract
By integrating triple terahertz quantum cascade lasers (at ~3.25 THz) monolithically into an array, a peak power of 213 mW is obtained at 10 K with a threshold current density of only 257 A/cm2. The device shows distinct single-lobe far-field behaviour in the temperature range from 10 to 90 K, with a full-width at half-maximum of 36°. The highest operating temperature of the array laser is identical to that of the single ridge laser, indicating good heat dissipation design in the array. These results are promising for realising high power THz quantum cascade lasers.
Keywords
current density; integrated optoelectronics; quantum cascade lasers; terahertz wave devices; heat dissipation design; monolithically integrated terahertz quantum cascade array laser; power 213 mW; single-lobe far-field behaviour; temperature 10 K to 90 K; threshold current density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.3456
Filename
6678468
Link To Document