2.5-V bipolar/CMOS circuits for 0.25-μm BiCMOS technology

Author

Chen, Chih-Liang

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

27

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

485

Lastpage

491

Abstract

An ECL circuit with an active pull-down device, operated from a CMOS supply voltage, is described as a high-speed digital circuit for a 0.25-μm BiCMOS technology. A pair of ECL/CMOS level converters with built-in logic capability is presented for effective intermixing of ECL with CMOS circuits. Using a 2.5-V supply and a reduced-swing BiNMOS buffer, the ECL circuit has reduced power dissipation, while still providing good speed. A design example shows the implementation of complex logic by emitter and collector dottings and the selective use of ECL circuits to achieve high performance

Keywords

BIMOS integrated circuits; digital integrated circuits; integrated circuit technology; 0.25 micron; 2.5 V; BiCMOS technology; CMOS supply voltage; ECL circuit; ECL/CMOS level converters; active pull-down; built-in logic capability; collector dotting; complex logic; design example; digital ICs; emitter dotting; high-speed digital circuit; implementation; intermixing of ECL with CMOS; operation; reduced power dissipation; reduced-swing BiNMOS buffer; scaling; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Digital circuits; Logic circuits; Logic design; Logic devices; Power dissipation; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.126535

Filename

126535