A design technique for a high-gain, 10-GHz class-bandwidth GaAs MESFET amplifier IC module

Author

Ishihara, Noboru ; Sano, Eiichi ; Imai, Yuhki ; Kikuchi, Hiroyuki ; Yamane, Yasuro

Author_Institution

NTT LSI Lab, Kanagawa, Japan

Volume

27

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

554

Lastpage

562

Abstract

A design procedure is proposed for a high-gain and wideband IC module, using stability analysis and a unified design methodology for ICs and packages. A multichip structure is developed using stability analysis and the requirements for stable operation are determined for each IC chip, package, and interface condition between them. Furthermore, to reduce the parasitic influences, several improvements in the interface and package design are clarified, such as wideband matching and LC resonance damping. IC design using effective feedback techniques for enlarging the bandwidth are also presented. The ICs are fabricated using 0.2-μm GaAs MESFET IC technology. To verify the validity of these techniques, an equalizer IC module for 10-Gb/s optical communication systems was fabricated, achieving a gain of 36 dB and a bandwidth of 9 GHz

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; hybrid integrated circuits; microwave amplifiers; optical communication equipment; packaging; wideband amplifiers; 0.2 micron; 10 GHz; 10 Gbit/s; 36 dB; 9 GHz; GaAs; LC resonance damping; MCM; MESFET amplifier IC module; bandwidth; design procedure; design technique; equalizer IC module; feedback techniques; gain; high-gain; hybrid ICs; interface condition; multichip module; multichip structure; optical communication systems; package design; semiconductors; stability analysis; unified design methodology; wideband IC module; wideband matching; Bandwidth; Damping; Design methodology; Gallium arsenide; Integrated circuit packaging; MESFETs; Optical feedback; Resonance; Stability analysis; Wideband;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.126543

Filename

126543