Title :
A design technique for a high-gain, 10-GHz class-bandwidth GaAs MESFET amplifier IC module
Author :
Ishihara, Noboru ; Sano, Eiichi ; Imai, Yuhki ; Kikuchi, Hiroyuki ; Yamane, Yasuro
Author_Institution :
NTT LSI Lab, Kanagawa, Japan
fDate :
4/1/1992 12:00:00 AM
Abstract :
A design procedure is proposed for a high-gain and wideband IC module, using stability analysis and a unified design methodology for ICs and packages. A multichip structure is developed using stability analysis and the requirements for stable operation are determined for each IC chip, package, and interface condition between them. Furthermore, to reduce the parasitic influences, several improvements in the interface and package design are clarified, such as wideband matching and LC resonance damping. IC design using effective feedback techniques for enlarging the bandwidth are also presented. The ICs are fabricated using 0.2-μm GaAs MESFET IC technology. To verify the validity of these techniques, an equalizer IC module for 10-Gb/s optical communication systems was fabricated, achieving a gain of 36 dB and a bandwidth of 9 GHz
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; hybrid integrated circuits; microwave amplifiers; optical communication equipment; packaging; wideband amplifiers; 0.2 micron; 10 GHz; 10 Gbit/s; 36 dB; 9 GHz; GaAs; LC resonance damping; MCM; MESFET amplifier IC module; bandwidth; design procedure; design technique; equalizer IC module; feedback techniques; gain; high-gain; hybrid ICs; interface condition; multichip module; multichip structure; optical communication systems; package design; semiconductors; stability analysis; unified design methodology; wideband IC module; wideband matching; Bandwidth; Damping; Design methodology; Gallium arsenide; Integrated circuit packaging; MESFETs; Optical feedback; Resonance; Stability analysis; Wideband;
Journal_Title :
Solid-State Circuits, IEEE Journal of
