Correlation between CMOS Transistor and Capacitor Measurements of Interface Trap Spectra

The radiation-induced change in the energy spectra of SiO2-Si interface traps as determined using the charge-pumping and weak-inversion techniques on CMOS transistors and using the quasi-static C-V and detailed model techniques on CMOS capacitors are compared. Over the range of approximately 1010 to 1012 cm-1 eV-1, good quantitative agreement is obtained between these methods.