A 512-kb flash EEPROM embedded in a 32-b microcontroller

Author

Kuo, Clinton ; Weidner, Mark ; Toms, Thomas ; Choe, Henry ; Chang, Ko-Min ; Harwood, Ann ; Jelemensky, Joseph ; Smith, Philip

Author_Institution

Motorola Inc., Austin, TX, USA

Volume

27

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

574

Lastpage

582

Abstract

A 512-kb flash EEPROM developed for microcontroller applications is reported. Many process and performance constraints associated with the conventional flash EEPROM have been eliminated through the development of a new flash EEPROM cell and new circuit techniques. Design of the 512-kb flash EEPROM, which is programmable for different array sizes, has been evaluated from 256- and 384-kb arrays embedded in new 32-b microcontrollers. The 512-kb flash EEPROM has incorporated the newly developed source-coupled split-gate (SCSG) flash EEPROM cell, Zener-diode controlled programming voltages, internally generated erase voltage, and a new differential sense amplifier. It has eliminated overerase and program disturb problems without relying on tight process controls and on critical operational sequences and timings, such as intelligent erase, intelligent program, and preprogram before erase. A modular approach was used for chip design to minimize development time and for processing technology to achieve high manufacturability and flexibility

Keywords

CMOS integrated circuits; EPROM; VLSI; integrated memory circuits; microcontrollers; 32 bit; 32-b microcontroller; 512 kbit; CMOS; EEPROM cell; Zener-diode controlled programming voltages; chip design; circuit techniques; differential sense amplifier; flash EEPROM; flexibility; internally generated erase voltage; manufacturability; microcontroller applications; microcontroller embedded EEPROM; modular approach; performance constraints; programmable for different array sizes; source-coupled split-gate; Chip scale packaging; Circuits; Differential amplifiers; EPROM; Manufacturing processes; Microcontrollers; Process control; Split gate flash memory cells; Timing; Voltage control;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.126546

Filename

126546