DocumentCode

886457

Title

Dependence of threshold voltage of silicon p-channel MOSFET´s on crystal orientation

Author

Leuenberger, F.

Volume

54

Issue

12

fYear

1966

Firstpage

1985

Lastpage

1987

Keywords

Annealing; Cameras; Etching; Glass; Lenses; MOSFETs; Metallization; NASA; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1966.5319

Filename

1447249