Title :
Repetition frequency stabilisation of passively mode-locked semiconductor lasers
Author :
Helkey, R.J. ; Derickson, D.J. ; Mar, Alan ; Bowers, John E. ; Thornton, R.L.
Author_Institution :
California Univ., Santa Barbara, CA, USA
Abstract :
The repetition frequency of an external cavity mode-locked GaAs semiconductor diode laser has been stabilised by voltage controlled electrical feedback. The phase noise has been reduced by 40 dB at 1 kHz offset from the carrier and timing jitter reduced from more than 30 ps to 4 ps. This technique can be used to stabilise millimetre-wave mode-locked lasers.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; feedback; gallium arsenide; laser cavity resonators; laser frequency stability; laser mode locking; semiconductor junction lasers; GaAs-AlGaAs; diode laser; external cavity; frequency stabilisation; millimetre-wave; passive mode locking; phase noise; repetition frequency; semiconductor lasers; voltage controlled electrical feedback;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921229
