1 /spl mu/m MOSFET VLSI technology. II. Device designs and characteristics for high-performance logic applications

Author

Dennard, Robert H. ; Gaensslen, Fritz H. ; Walker, Edward J. ; Cook, Peter W.

Volume

14

Issue

2

fYear

1979

fDate

4/1/1979 12:00:00 AM

Firstpage

247

Lastpage

255

Abstract

For pt.I see ibid., vol.SC14, no.2, p.240 (1979). Micrometer-dimension n-channel silicon-gate MOSFETs optimized for high-performance logic applications have been designed and characterized for both room-temperature and liquid-nitrogen-temperature operation. Appropriate choices of design parameters are shown to give proper device thresholds which are reasonably independent of channel length and width. Depletion-type devices are characterized at room temperature for load device use. Logic performance capability is demonstrated by test results on NOR circuits for representative fanout and loading conditions. Unloaded ring oscillators achieved switching delays down to 240 ps at room temperature and down to 100 ps at liquid nitrogen temperature.

Keywords

Field effect integrated circuits; Integrated circuit technology; Integrated logic circuits; Large scale integration; Logic design; field effect integrated circuits; integrated circuit technology; integrated logic circuits; large scale integration; logic design; Circuit testing; Design optimization; Logic circuits; Logic design; Logic devices; Logic testing; MOSFET circuits; Ring oscillators; Temperature; Very large scale integration;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1979.1051171

Filename

1051171