DocumentCode
886618
Title
A Proposed Scheme for Measuring and Categorizing the Total Ionizing Radiation Dose Response of MOS Devices
Author
Boesch, Edwin H., Jr.
Author_Institution
US Army Laboratory Command Harry Diamond Laboratories 2800 Powder Mill Road Adelphi, Maryland 20783-1197
Volume
33
Issue
6
fYear
1986
Firstpage
1337
Lastpage
1342
Abstract
A scheme is proposed for categorizing the longterm total ionizing radiation dose responses of MOS (metal-oxide-semiconductor) devices based on the relative magnitudes of hole trapping and interface-state buildup in the gate oxide layer. Also presented is a procedure for determining the response categories of test devices through standard radiation response measurements.
Keywords
Circuits; Ionizing radiation; Laboratories; MOS devices; MOSFETs; Powders; Temperature dependence; Testing; Threshold voltage; Time measurement;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1986.4334602
Filename
4334602
Link To Document