Technique for Radiation Effects Measurements of SOI

We have developed and tested a technique for measuring the radiation response of the interfaces of silicon-on-insulator (SOI) materials. The approach uses deconvolution of capacitance-voltage (CV) data of full and etched-back SOI structures, to provide the CV curves of each of the three interfaces. From these curves the changes in the voltage due to oxide trapped charge and interface states are determined. The technique was designed to provide a comparison of the radiation responses of different SOI materials. In this paper we examine the total dose effects on SOI material prepared by melt recrystallization.