DocumentCode
886795
Title
Radiation-Induced Interface Traps in Power Mosfets
Author
Singh, Gurbax ; Galloway, Kenneth F. ; Russell, Thomas J.
Volume
33
Issue
6
fYear
1986
Firstpage
1454
Lastpage
1459
Abstract
Methods for estimating radiation-induced interface trap density from the current-voltage (I-V) characteristics of MOSFETs are described and applied to commercially available power MOSFETs. The power MOSFETs show severe degradation on radiation exposure with the effects of positive oxide trapped charge dominating; however, interface trap buildup is significant. The results are compared to experimental measurements available on other technologies.
Keywords
Charge measurement; Current measurement; Degradation; Density measurement; Electric variables; Ionizing radiation; MOSFETs; Power measurement; Threshold voltage; Transconductance;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1986.4334622
Filename
4334622
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