Title :
Effects of 6 MeV Electron Irradiation on the Electrical Characteristics of LPE Hg0.7Cd0.3Te/CdTe Mesa Photodiodes
Author :
Domkowski, D.W. ; Feller, D.G. ; Johnson, L.R. ; Westmark, C.I. ; Norris, C.B. ; Fuller, C.T. ; Bajaj, J.
Author_Institution :
Air Force Weapons Laboratory Albuquerque, New Mexico 87117-6008
Abstract :
The reverse leakage currents of ion-implanted LPE Hg0.7Cd0.3Te photodiodes increase significantly after 6 MeV electron irradiations to fluences of 1014< cm-2 at T= 77K or 1015 cm-2 at T=193K. Associated increases in low-frequency noise and the effects of 300K annealing are shown.
Keywords :
Annealing; Detectors; Diodes; Electric variables; Electrons; Laboratories; Leakage current; Photodiodes; Temperature; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1986.4334625
