• DocumentCode
    886822
  • Title

    Effects of 6 MeV Electron Irradiation on the Electrical Characteristics of LPE Hg0.7Cd0.3Te/CdTe Mesa Photodiodes

  • Author

    Domkowski, D.W. ; Feller, D.G. ; Johnson, L.R. ; Westmark, C.I. ; Norris, C.B. ; Fuller, C.T. ; Bajaj, J.

  • Author_Institution
    Air Force Weapons Laboratory Albuquerque, New Mexico 87117-6008
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • Firstpage
    1471
  • Lastpage
    1473
  • Abstract
    The reverse leakage currents of ion-implanted LPE Hg0.7Cd0.3Te photodiodes increase significantly after 6 MeV electron irradiations to fluences of 1014< cm-2 at T= 77K or 1015 cm-2 at T=193K. Associated increases in low-frequency noise and the effects of 300K annealing are shown.
  • Keywords
    Annealing; Detectors; Diodes; Electric variables; Electrons; Laboratories; Leakage current; Photodiodes; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334625
  • Filename
    4334625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886822