• DocumentCode
    886990
  • Title

    Charge Transport by the Ion Shunt Effect

  • Author

    Knudson, A.R. ; Campbell, A.B. ; Hauser, J.R. ; Jessee, M. ; Stapor, W.J. ; Shapiro, P.

  • Author_Institution
    Naval Research Laboratory, Washington, D.C. 20375
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • Firstpage
    1560
  • Lastpage
    1564
  • Abstract
    Information on the quantity of charge transported between two junctions by the ion shunt effect is presented as a function of bias voltages and ionization densities.
  • Keywords
    CMOS process; Charge measurement; Circuit testing; Current measurement; Energy loss; Helium; Ionization; Laboratories; Logic devices; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334641
  • Filename
    4334641
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886990