DocumentCode
887094
Title
The Effect of Elevated Temperature on Latchup and Bit Errors in CMOS Devices
Author
Kolasinski, W.A. ; Koga, R. ; Schnauss, E. ; Duffey, J.
Author_Institution
Space Sciences Laboratory the Aerospace Corporation P. O. Box 92957, Los Angeles, CA 90009
Volume
33
Issue
6
fYear
1986
Firstpage
1605
Lastpage
1609
Abstract
Equipment for testing microcircuits at elevated temperatures for Single Event Phenomena (SEP) such as upset (SEU) and latchup (SEL) has been developed and measurements on several device types have been performed. Very large changes in cross-section and threshold LET have been observed over the temperature range of 25°C to 120°C for SEU and SEL.
Keywords
Argon; Cyclotrons; Hardware; Instruments; Laboratories; Land surface temperature; Performance evaluation; Single event upset; System testing; Temperature distribution;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1986.4334649
Filename
4334649
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