• DocumentCode
    887094
  • Title

    The Effect of Elevated Temperature on Latchup and Bit Errors in CMOS Devices

  • Author

    Kolasinski, W.A. ; Koga, R. ; Schnauss, E. ; Duffey, J.

  • Author_Institution
    Space Sciences Laboratory the Aerospace Corporation P. O. Box 92957, Los Angeles, CA 90009
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • Firstpage
    1605
  • Lastpage
    1609
  • Abstract
    Equipment for testing microcircuits at elevated temperatures for Single Event Phenomena (SEP) such as upset (SEU) and latchup (SEL) has been developed and measurements on several device types have been performed. Very large changes in cross-section and threshold LET have been observed over the temperature range of 25°C to 120°C for SEU and SEL.
  • Keywords
    Argon; Cyclotrons; Hardware; Instruments; Laboratories; Land surface temperature; Performance evaluation; Single event upset; System testing; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334649
  • Filename
    4334649