• DocumentCode
    887105
  • Title

    Single Event Upset Dependence on Temperature or an NMOS/Resistive-Load Static RAM

  • Author

    Stapor, W.J. ; Johnson, R.L., Jr. ; Xapsos, M.A. ; Fernald, K.W. ; Campbell, A.B. ; Bhuva, B.L. ; Diehi, S.E.

  • Author_Institution
    Naval Research Laboratory, Washington, DC 20375
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • Firstpage
    1610
  • Lastpage
    1615
  • Abstract
    Measurements of temperature effects on SEU rates have been made on NMOS/resistive-load static RAMs using energetic protons and alphas. Results have indicated that SEU cross sections increase with increasing temperature for these parts. Proton and alpha induced nuclear reactions allow upsets to occur below measured LET thresholds.
  • Keywords
    Electrical resistance measurement; Heating; MOS devices; Particle beam measurements; Particle beams; Read-write memory; Single event upset; Temperature dependence; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334650
  • Filename
    4334650
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887105