DocumentCode
887236
Title
A simplified self-aligned Al-gate MOS technology for high performance depletion-logic circuits
Author
De Souza, Pereira J. ; Charry, E.
Volume
14
Issue
3
fYear
1979
fDate
6/1/1979 12:00:00 AM
Firstpage
651
Lastpage
653
Abstract
A simplified fully ion-implanted Al-gate MOS technology for high performance self-aligned depletion load circuits is described. Using a 21 stage-ring oscillator, delay times and speed-power products of 1.1 ns and 1 pJ, respectively, were measured.
Keywords
Field effect integrated circuits; Integrated circuit technology; Integrated logic circuits; field effect integrated circuits; integrated circuit technology; integrated logic circuits; Analog integrated circuits; Band pass filters; Delay; Etching; Integrated circuit technology; Ion implantation; Logic circuits; Plasma measurements; Resists; Solid state circuits;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1979.1051232
Filename
1051232
Link To Document