Title :
Time minimization for a three-step cyclic process of deposition and diffusion
Abstract :
The optimal layer thickness for minimizing the total time to build a layer with a three-step cyclic process of deposition and diffusion, or "annealing," is determined. Deposition and diffusion processes scale rather differently according to time. This analysis, for the building of a TiN barrier layer, quantifies those times in a model and is then used to find the thickness that minimizes a total time function across more than one process. This model would apply equally to the doping of SiO2 strata.
Keywords :
annealing; coating techniques; diffusion barriers; surface diffusion; titanium compounds; SiO2 strata; TiN; TiN barrier layer; annealing; deposition; diffusion; doping; optimal layer thickness; three-step cyclic process; time minimization; Cleaning; Conductivity; Diffusion processes; Doping; Equations; Optimal control; Plasmas; Semiconductor process modeling; Tin; Titanium;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2003.822733