Title :
Conversion gain null in FET mixers
Author :
Fitchen, F.C. ; Sundberg, G.C.
Abstract :
Minima of conversion gain are observed in FET mixers at rather low levels of drain-source voltage. This phenomenon is described by contours of constant conversion gain on the static drain characteristics. The explanation given in terms of polynomial coefficients is substantiated by cross-modulation data.
Keywords :
Boron; Boundary conditions; Equations; FETs; Oxidation; Polynomials; Semiconductor impurities; Space heating; Voltage; Zirconium;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5401
