• DocumentCode
    887382
  • Title

    Heat flow in n++-n-n+epitaxial GaAs bulk effect devices

  • Author

    Knight, S.

  • Volume
    55
  • Issue
    1
  • fYear
    1967
  • Firstpage
    112
  • Lastpage
    113
  • Abstract
    The temperature distribution has been computed for n++-n-n+sandwich structures mounted on an infinite half plane of copper. It is found necessary to include the temperature dependence of the thermal conductivities of the semiconductor layers in the calculation.
  • Keywords
    Conducting materials; Delay effects; Electrons; Equations; Gallium arsenide; Gunn devices; Indium tin oxide; Steady-state; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5410
  • Filename
    1447340
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887382