DocumentCode :
887427
Title :
Test patterns for EPROMs
Author :
Kondo, Ryuji
Volume :
14
Issue :
4
fYear :
1979
fDate :
8/1/1979 12:00:00 AM
Firstpage :
730
Lastpage :
734
Abstract :
Detectable failure modes are clarified for each writing pattern. The write and erase modes for EPROM are expressed by six matrices. Four matrices express the failure modes in address, decoder and data input/output circuits, one expresses the write pattern and the last expresses bad bits in the memory array. Using this matrix method, it is clarified that the undetectable failure mode number in a 3×3 memory array is zero with a write pattern which is not a checker pattern. In addition, the failure detection rate in all `1´ patterns is calculated to be about 30 percent (MNL=5) in the case of a 1 kbit memory array.
Keywords :
Field effect integrated circuits; Integrated circuit testing; Integrated memory circuits; Read-only storage; field effect integrated circuits; integrated circuit testing; integrated memory circuits; read-only storage; Circuit testing; Decoding; EPROM; Electric variables measurement; Large-scale systems; Microcomputers; PROM; Read only memory; Semiconductor memory; Writing;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1979.1051251
Filename :
1051251
Link To Document :
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