Title :
Implantation of zinc into gallium arsenide
Author :
Schroeder, Joseph B.
Abstract :
A technique is described for producing high-energy beams of metallic ions. The application of this technique to microcircuit manufacture is demonstrated by implanting zinc to prepare a p-n junction in gallium arsenide.
Keywords :
Gallium arsenide; Impedance; Ion accelerators; Ion beams; Plasma accelerators; Plasma materials processing; Plasma sources; Plasma temperature; Prototypes; Zinc;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1967.5423
