DocumentCode
887502
Title
Implantation of zinc into gallium arsenide
Author
Schroeder, Joseph B.
Volume
55
Issue
1
fYear
1967
Firstpage
125
Lastpage
126
Abstract
A technique is described for producing high-energy beams of metallic ions. The application of this technique to microcircuit manufacture is demonstrated by implanting zinc to prepare a p-n junction in gallium arsenide.
Keywords
Gallium arsenide; Impedance; Ion accelerators; Ion beams; Plasma accelerators; Plasma materials processing; Plasma sources; Plasma temperature; Prototypes; Zinc;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5423
Filename
1447353
Link To Document