DocumentCode
887576
Title
An ion-implanted subsurface monolithic Zener diode
Author
Lui, Sik ; Meyer, Robert G. ; Kwan, Norman
Volume
14
Issue
4
fYear
1979
Firstpage
782
Lastpage
784
Abstract
A new ion-implanted subsurface Zener diode structure compatible with bipolar monolithic technology is described. A well-controlled p-implant level determines the breakdown voltage of 6.17 V with a typical measured standard deviation less than 20 mV. The measured long-term stability of the resulting diode was better than 1 mV after continuous operation at 125/spl deg/C for 100h. Temperature compensation of the diode yielded a 6.70 V reference with a temperature coefficient less than 9 ppm//spl deg/C.
Keywords
Ion implantation; Zener diodes; ion implantation; Breakdown voltage; Circuit theory; Diodes; Electric breakdown; Measurement standards; Operational amplifiers; Stability; Temperature; Transfer functions;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1979.1051266
Filename
1051266
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