DocumentCode
887631
Title
Experimental single flux quantum NDRO Josephson memory cell
Author
Henkels, Walter H. ; Greiner, James H.
Volume
14
Issue
5
fYear
1979
fDate
10/1/1979 12:00:00 AM
Firstpage
794
Lastpage
796
Abstract
Single flux quantum nondestructive readout (NDRO) Josephson memory cells which store an energy of only ~6×10/SUP -20/ J have been successfully fabricated and operated for the first time. Margin enhancement due to quantization, and low operating currents render this cell an attractive basis for a <1 ns access-time Josephson cache memory designed with a 2.5 μm technology.
Keywords
Cryoelectric stores; Josephson effect; Superconducting junction devices; cryoelectric stores; superconducting junction devices; Cache memory; Current supplies; Decoding; Delay; Inductance; Integrated circuit interconnections; Quantization; Testing; Voltage; Writing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1979.1051272
Filename
1051272
Link To Document