Title :
Experimental single flux quantum NDRO Josephson memory cell
Author :
Henkels, Walter H. ; Greiner, James H.
fDate :
10/1/1979 12:00:00 AM
Abstract :
Single flux quantum nondestructive readout (NDRO) Josephson memory cells which store an energy of only ~6×10/SUP -20/ J have been successfully fabricated and operated for the first time. Margin enhancement due to quantization, and low operating currents render this cell an attractive basis for a <1 ns access-time Josephson cache memory designed with a 2.5 μm technology.
Keywords :
Cryoelectric stores; Josephson effect; Superconducting junction devices; cryoelectric stores; superconducting junction devices; Cache memory; Current supplies; Decoding; Delay; Inductance; Integrated circuit interconnections; Quantization; Testing; Voltage; Writing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051272
