980-nm Monolithic Passively Mode-Locked Diode Lasers With 62 pJ of Pulse Energy

Author

Gopinath, Juliet T. ; Chann, Bien ; Huang, Robin K. ; Harris, Christopher ; Plant, Jason J. ; Missaggia, Leo ; Donnelly, Joseph P. ; Juodawlkis, Paul W. ; Ripin, Daniel J.

Author_Institution

Lincoln Lab., MIT, Lexington, MA

Volume

19

Issue

12

fYear

2007

fDate

6/15/2007 12:00:00 AM

Firstpage

937

Lastpage

939

Abstract

Passively mode-locked 980-nm slab-coupled optical waveguide lasers have been demonstrated with pulse energies as high as 62 pJ and average powers of 489 mW at 7.92 GHz from a 5-mm device with a 300-mum absorber. Mode-locking has been observed with devices ranging from 3 to 10 mm in length

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; laser mode locking; monolithic integrated circuits; quantum well lasers; waveguide lasers; 3 to 10 mm; 300 mum; 62 pJ; 7.92 GHz; 980 nm; AlGaAs; GaAs; diode lasers; monolithic lasers; optical waveguide lasers; passive mode-locking; quantum well lasers; slab-coupled waveguide lasers; Diode lasers; Laser mode locking; Optical pulses; Optical pumping; Optical waveguides; Power lasers; Pulse amplifiers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; High-power diode lasers; mode-locked lasers; quantum-well devices; semiconductor lasers; single-mode semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.898873

Filename

4214866