Title :
CMOS/SOS EAROM memory arrays
Author :
Stewart, Roger G.
fDate :
10/1/1979 12:00:00 AM
Abstract :
A new low-voltage nonvolatile memory cell has been fabricated using standard CMOS/SOS processing. The cell can be programmed at 10 V, conducts 400 μA when programmed, and can be erased either electrically or with UV light. Using this cell, a family of memories have been built which dissipate only 50 μW at 5 V, retain data for 17.3 years at 125°C, and have a WRITE/ERASE endurance in excess of 300 cycles.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Large scale integration; Read-only storage; field effect integrated circuits; integrated circuit technology; large scale integration; read-only storage; CMOS process; CMOS technology; Detectors; EPROM; Helium; Large scale integration; Nonvolatile memory; Propagation delay; Pulse circuits; Secondary generated hot electron injection;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051285
