• DocumentCode
    887769
  • Title

    CMOS/SOS EAROM memory arrays

  • Author

    Stewart, Roger G.

  • Volume
    14
  • Issue
    5
  • fYear
    1979
  • fDate
    10/1/1979 12:00:00 AM
  • Firstpage
    860
  • Lastpage
    864
  • Abstract
    A new low-voltage nonvolatile memory cell has been fabricated using standard CMOS/SOS processing. The cell can be programmed at 10 V, conducts 400 μA when programmed, and can be erased either electrically or with UV light. Using this cell, a family of memories have been built which dissipate only 50 μW at 5 V, retain data for 17.3 years at 125°C, and have a WRITE/ERASE endurance in excess of 300 cycles.
  • Keywords
    Field effect integrated circuits; Integrated circuit technology; Large scale integration; Read-only storage; field effect integrated circuits; integrated circuit technology; large scale integration; read-only storage; CMOS process; CMOS technology; Detectors; EPROM; Helium; Large scale integration; Nonvolatile memory; Propagation delay; Pulse circuits; Secondary generated hot electron injection;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1979.1051285
  • Filename
    1051285
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887769