• DocumentCode
    887782
  • Title

    16K CMOS/SOS asynchronous static RAM

  • Author

    Dingwall, Andrew G F ; Stewart, Roger G.

  • Volume
    14
  • Issue
    5
  • fYear
    1979
  • Firstpage
    867
  • Lastpage
    872
  • Abstract
    A new CMOS/SOS `buried-contact´ process allows fabrication of dense static memory cells. The technology is applied in a 16K RAM with 1150 /spl mu/m/SUP 2/ (1.78 mil/SUP 2/) cells based on 5 /spl mu/m design rules.
  • Keywords
    Field effect integrated circuits; Integrated circuit technology; Integrated memory circuits; Large scale integration; Random-access storage; field effect integrated circuits; integrated circuit technology; integrated memory circuits; large scale integration; random-access storage; CMOS logic circuits; CMOS memory circuits; CMOS process; CMOS technology; Integrated circuit interconnections; Random access memory; Read-write memory; Solid state circuits; Stacking; Switches;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1979.1051287
  • Filename
    1051287
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887782