• DocumentCode
    887842
  • Title

    Influence of polysilicon deposition on fabrication of power polysilicon emitter bipolar transistors

  • Author

    Austin, Patrick ; Caminade, J. ; Sanchez, Jose L.

  • Author_Institution
    CNRS, Toulouse, France
  • Volume
    29
  • Issue
    9
  • fYear
    1993
  • fDate
    4/29/1993 12:00:00 AM
  • Firstpage
    741
  • Lastpage
    743
  • Abstract
    The aim was to fabricate a polysilicon emitter bipolar transistor for power applications. To this end, different polysilicon deposition steps compatible with the power bipolar technology and their influence on electrical characteristics were studied.
  • Keywords
    bipolar transistors; chemical vapour deposition; elemental semiconductors; oxidation; power transistors; silicon; I-V characteristics; LPCVD; SIMS depth profiles; Si; Si-SiO 2; electrical characteristics; polysilicon deposition; power bipolar technology; power polysilicon emitter bipolar transistors; thin interfacial oxide; wafer loading;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930497
  • Filename
    211240
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887842