Title :
New selfalignment processes for amorphous silicon thin film transistors with polysilicon source and drain
Author :
Sugiura, O. ; Kim, C.-D. ; Matsumura, Mieko
Author_Institution :
Tokyo Inst. of Technol., Japan
fDate :
4/29/1993 12:00:00 AM
Abstract :
New fabrication processes for selfaligned amorphous silicon TFTs are proposed. The TFTs have a polysilicon source and drain which are formed by ArF excimer laser annealing. They exhibit a field-effect mobility of 0.8 cm2/Vs, threshold voltage of 11 V, and on/off current ratio of higher than 106.
Keywords :
amorphous semiconductors; carrier mobility; elemental semiconductors; laser beam annealing; semiconductor technology; silicon; thin film transistors; ArF excimer laser annealing; TFTs; amorphous Si; field-effect mobility; on/off current ratio; polysilicon drain; polysilicon source; selfalignment processes; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930503
